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G4S06530BT

Global Power Technology-GPT

Manufacturer Part #:

G4S06530BT

Manufacturer:

Global Power Technology-GPT

Package:

TO-247AB

Datasheet:

Description:

SIC SCHOTTKY DIODE 650V 30A 3-PI

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Specifications

Product Details

Mfr	Global Power Technology-GPT
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Cut Tape (CT)
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-247AB
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 15 A
Current - Average Rectified (Io) (per Diode)	39A (DC)

User Guide

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.