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G3S12006B

Global Power Technology-GPT

Manufacturer Part #:

G3S12006B

Manufacturer:

Global Power Technology-GPT

Package:

TO-247AB

Datasheet:

Description:

SIC SCHOTTKY DIODE 1200V 6A 3-PI

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Specifications

Product Details

Mfr	Global Power Technology-GPT
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Cut Tape (CT)
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-247AB
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)	1200 V
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A
Current - Average Rectified (Io) (per Diode)	14A (DC)

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