Home / Single Diodes / TRS8E65H,S1Q

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS8E65H,S1Q

Toshiba Semiconductor and Storage

Manufacturer Part #:

TRS8E65H,S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220-2L

Datasheet:

Description:

G3 SIC-SBD 650V 8A TO-220-2L

Send an RFQ

For any specific requests regarding price, qty, ect. please send an RFQ.

Contact Name

Company Name

Country

Quantity

Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2
Product Status	Active
Capacitance @ Vr, F	520pF @ 1V, 1MHz
Supplier Device Package	TO-220-2L
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	175°C
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 8 A

User Guide

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer.

Request for Quotations

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.