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TP65H150G4LSG-TR

Transphorm

Manufacturer Part #:

TP65H150G4LSG-TR

Manufacturer:

Transphorm

Package:

2-PQFN (8x8)

Datasheet:

Description:

650 V 13 A GAN FET

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Specifications

Product Details

Mfr	Transphorm
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	2-PowerTSFN
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 500µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Power Dissipation (Max)	52W (Tc)
Supplier Device Package	2-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)

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