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TJ90S04M3L,LQ

Toshiba Semiconductor and Storage

Manufacturer Part #:

TJ90S04M3L,LQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

DPAK+

Datasheet:

Description:

PB-F POWER MOSFET TRANSISTOR DPA

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Product Details

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	+10V, -20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	4.3mOhm @ 45A, 10V
Power Dissipation (Max)	180W (Tc)
Supplier Device Package	DPAK+
Gate Charge (Qg) (Max) @ Vgs	172 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	7700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	90A (Ta)

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