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SPP11N65C3XKSA1

Infineon Technologies

Manufacturer Part #:

SPP11N65C3XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Datasheet:

Description:

MOSFET N-CH 650V 11A TO220-3

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Specifications

Product Details

Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.9V @ 500µA
Base Product Number	SPP11N
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Power Dissipation (Max)	125W (Tc)
Supplier Device Package	PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)

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