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SPI35N10

Infineon Technologies

Manufacturer Part #:

SPI35N10

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Datasheet:

Description:

MOSFET N-CH 100V 35A TO262-3

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Specifications

Product Details

Mfr	Infineon Technologies
Series	SIPMOS®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 83µA
Base Product Number	SPI35N
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	44mOhm @ 26.4A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1570 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)

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