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SIHB22N65E-T1-GE3

Vishay

Manufacturer Part #:

SIHB22N65E-T1-GE3

Manufacturer:

Vishay

Package:

D²PAK (TO-263)

Datasheet:

Description:

N-CHANNEL 650V

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Specifications

Product Details

Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Power Dissipation (Max)	227W (Tc)
Supplier Device Package	D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	2415 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)

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