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SIHB12N60ET1-GE3

Vishay

Manufacturer Part #:

SIHB12N60ET1-GE3

Manufacturer:

Vishay

Package:

D²PAK (TO-263)

Datasheet:

Description:

MOSFET N-CH 600V 12A TO263

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Product Details

Mfr	Vishay Siliconix
Series	E
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIHB12
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Power Dissipation (Max)	147W (Tc)
Supplier Device Package	D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	937 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)

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