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PSMN8R5-100ESQ

NXP USA Inc.

Manufacturer Part #:

PSMN8R5-100ESQ

Manufacturer:

NXP USA Inc.

Package:

I2PAK

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Specifications

Product Details

Mfr	NXP USA Inc.
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	8.5mOhm @ 25A, 10V
Power Dissipation (Max)	263W (Tc)
Supplier Device Package	I2PAK
Gate Charge (Qg) (Max) @ Vgs	111 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	5512 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tj)

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