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PSMN8R0-30YLC115

NXP USA Inc.

Manufacturer Part #:

PSMN8R0-30YLC115

Manufacturer:

NXP USA Inc.

Package:

LFPAK56, Power-SO8

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Specifications

Product Details

Mfr	NXP USA Inc.
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Product Status	Active
Vgs(th) (Max) @ Id	1.95V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	7.9mOhm @ 15A, 10V
Power Dissipation (Max)	42W (Tc)
Supplier Device Package	LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	848 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	54A (Tc)

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