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PSMN1R6-30BL,118

NXP USA Inc.

Manufacturer Part #:

PSMN1R6-30BL,118

Manufacturer:

NXP USA Inc.

Package:

D2PAK

Datasheet:

Description:

NOW NEXPERIA PSMN1R6-30BL - 100A

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Product Details

Mfr	NXP USA Inc.
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	2.15V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	1.9mOhm @ 25A, 10V
Power Dissipation (Max)	306W (Tc)
Supplier Device Package	D2PAK
Gate Charge (Qg) (Max) @ Vgs	212 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	12493 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)

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