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PHU11NQ10T,127

NXP USA Inc.

Manufacturer Part #:

PHU11NQ10T,127

Manufacturer:

NXP USA Inc.

Package:

I-Pak

Datasheet:

Description:

MOSFET N-CH 100V 10.9A IPAK

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Specifications

Product Details

Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	PHU11
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	180mOhm @ 9A, 10V
Power Dissipation (Max)	57.7W (Tc)
Supplier Device Package	I-Pak
Gate Charge (Qg) (Max) @ Vgs	14.7 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10.9A (Tc)

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