Home / Bipolar Transistor Arrays, Pre-Biased / PEMD16115

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PEMD16115

NXP USA Inc.

Manufacturer Part #:

PEMD16115

Manufacturer:

NXP USA Inc.

Package:

SOT-666

Datasheet:

Description:

0.1A, 50V, 2-ELEMENT, NPN AND P

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Specifications

Product Details

Mfr	NXP USA Inc.
Series	-
Package	Bulk
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Product Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1)	22kOhms
Frequency - Transition	-
Supplier Device Package	SOT-666
Resistor - Emitter Base (R2)	47kOhms
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V

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