Home / Single, Pre-Biased Bipolar Transistors / PDTC123JM,315

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PDTC123JM,315

NXP USA Inc.

Manufacturer Part #:

PDTC123JM,315

Manufacturer:

NXP USA Inc.

Package:

DFN1006-3

Datasheet:

Description:

NOW NEXPERIA PDTC123JM - SMALL S

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Specifications

Product Details

Mfr	NXP USA Inc.
Series	-
Package	Bulk
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Product Status	Active
Transistor Type	NPN - Pre-Biased
Base Product Number	PDTC123
Resistor - Base (R1)	2.2 kOhms
Supplier Device Package	DFN1006-3
Resistor - Emitter Base (R2)	47 kOhms
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V

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