Home / Single, Pre-Biased Bipolar Transistors / PDTC123EMB,315

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PDTC123EMB,315

NXP Semiconductors

Manufacturer Part #:

PDTC123EMB,315

Manufacturer:

NXP Semiconductors

Package:

DFN1006B-3

Datasheet:

Description:

NOW NEXPERIA PDTC123EMB - SMALL

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Product Details

Mfr	NXP Semiconductors
Series	-
Package	Bulk
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Product Status	Active
Transistor Type	NPN - Pre-Biased
Base Product Number	PDTC123
Resistor - Base (R1)	2.2 kOhms
Frequency - Transition	230 MHz
Supplier Device Package	DFN1006B-3
Resistor - Emitter Base (R2)	2.2 kOhms
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V

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