Home / Single, Pre-Biased Bipolar Transistors / PDTC115EMB,315

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PDTC115EMB,315

Name: PDTC115EMB,315
Brand: NXP Semiconductors
SKU: undefined
Rating: 5 (1 reviews)

NXP Semiconductors

Manufacturer Part #:

PDTC115EMB,315

Manufacturer:

NXP Semiconductors

Package:

DFN1006B-3

Datasheet:

Description:

PDTC115E - NPN RESISTOR-EQUIPPED

Specifications

Product Details

Frequency - Transition	230 MHz
Current - Collector (Ic) (Max)	20 mA
Resistor - Base (R1)	100 kOhms
Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Mounting Type	Surface Mount
Voltage - Collector Emitter Breakdown (Max)	50 V
Product Status	Active
Supplier Device Package	DFN1006B-3
Series	-
Transistor Type	NPN - Pre-Biased
Package / Case	SC-101, SOT-883
Power - Max	250 mW
Resistor - Emitter Base (R2)	100 kOhms
Mfr	NXP Semiconductors
Current - Collector Cutoff (Max)	1µA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V
Base Product Number	PDTC115

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