Home / Single, Pre-Biased Bipolar Transistors / PDTB143EQA147

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PDTB143EQA147

NXP USA Inc.

Manufacturer Part #:

PDTB143EQA147

Manufacturer:

NXP USA Inc.

Package:

DFN1010D-3

Datasheet:

Description:

PDTB143EQA BJT PNP

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Product Details

Mfr	NXP USA Inc.
Series	PDTB143
Package	Bulk
Power - Max	325 mW
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Product Status	Active
Transistor Type	PNP - Pre-Biased
Base Product Number	PDTB143
Resistor - Base (R1)	4.7 kOhms
Frequency - Transition	150 MHz
Supplier Device Package	DFN1010D-3
Resistor - Emitter Base (R2)	4.7 kOhms
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)	500 mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V

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