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IRFD110

Harris Corporation

Manufacturer Part #:

IRFD110

Manufacturer:

Harris Corporation

Package:

4-DIP, Hexdip, HVMDIP

Datasheet:

Description:

1A, 100V, 0.600 OHM, N-CHANNEL

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Specifications

Product Details

Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	IRFD110
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 10V
Power Dissipation (Max)	1.3W (Ta)
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)

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