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IRF820

Harris Corporation

Manufacturer Part #:

IRF820

Manufacturer:

Harris Corporation

Package:

TO-220AB

Datasheet:

Description:

2.5A, 500V, 3.000 OHM, N-CHANNEL

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Specifications

Product Details

Mfr	Harris Corporation
Series	PowerMESH™ II
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	IRF8
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
Power Dissipation (Max)	80W (Tc)
Supplier Device Package	TO-220AB
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Drain to Source Voltage (Vdss)	500 V
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)

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