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IRF640NLPBF

Infineon Technologies

Manufacturer Part #:

IRF640NLPBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Datasheet:

Description:

MOSFET N-CH 200V 18A TO262

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Specifications

Product Details

Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	IRF640
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	150mOhm @ 11A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	TO-262
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	1160 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)

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