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IPN65R1K5CEATMA1

Infineon Technologies

Manufacturer Part #:

IPN65R1K5CEATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

Datasheet:

Description:

MOSFET N-CH 650V 5.2A SOT223

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Product Details

Mfr	Infineon Technologies
Series	CoolMOS™ CE
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 100µA
Base Product Number	IPN65R1
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1A, 10V
Power Dissipation (Max)	5W (Tc)
Supplier Device Package	PG-SOT223
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)

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