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IPD65R600E6

Infineon Technologies

Manufacturer Part #:

IPD65R600E6

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Datasheet:

Description:

COOLMOS N-CHANNEL POWER MOSFET

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Product Details

Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 210µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	600mOhm @ 2.1A, 10V
Power Dissipation (Max)	63W (Tc)
Supplier Device Package	PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)

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