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IPD35N10S3L26ATMA1

Infineon Technologies

Manufacturer Part #:

IPD35N10S3L26ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

Description:

MOSFET N-CH 100V 35A TO252-31

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Specifications

Product Details

Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 39µA
Base Product Number	IPD35N10
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	24mOhm @ 35A, 10V
Power Dissipation (Max)	71W (Tc)
Supplier Device Package	PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)

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