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IPB039N10N3GE8197ATMA1

Infineon Technologies

Manufacturer Part #:

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Product Details

Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 160µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
Power Dissipation (Max)	214W (Tc)
Supplier Device Package	PG-TO263-7-3
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)

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