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IMW120R020M1HXKSA1

Infineon Technologies

Manufacturer Part #:

IMW120R020M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

Datasheet:

Description:

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Product Details

Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Vgs (Max)	+20V, -5V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5.2V @ 17.6mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	26.9mOhm @ 41A, 18V
Power Dissipation (Max)	375W (Tc)
Supplier Device Package	PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	3460 nF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	98A (Tc)

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