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GT60N321(Q)

Toshiba Semiconductor and Storage

Manufacturer Part #:

GT60N321(Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(LH)

Datasheet:

Description:

IGBT 1000V 60A 170W TO3P LH

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Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Power - Max	170 W
Mounting Type	Through Hole
Package / Case	TO-3PL
Product Status	Obsolete
Test Condition	-
Switching Energy	-
Base Product Number	GT60N321
Td (on/off) @ 25°C	330ns/700ns
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-3P(LH)
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 60A
Reverse Recovery Time (trr)	2.5 µs
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Voltage - Collector Emitter Breakdown (Max)	1000 V

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