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GT50N322A

Toshiba Semiconductor and Storage

Manufacturer Part #:

GT50N322A

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Datasheet:

Description:

PB-F IGBT / TRANSISTOR TO-3PN IC

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Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
IGBT Type	-
Input Type	Standard
Power - Max	156 W
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Test Condition	-
Switching Energy	-
Td (on/off) @ 25°C	-
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-3P(N)
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 60A
Reverse Recovery Time (trr)	800 ns
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	120 A
Voltage - Collector Emitter Breakdown (Max)	1000 V

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