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GP2T080A120H

SemiQ

Manufacturer Part #:

GP2T080A120H

Manufacturer:

SemiQ

Package:

TO-247-4

Datasheet:

Description:

SIC MOSFET 1200V 80M TO-247-4L

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Specifications

Product Details

Mfr	SemiQ
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Base Product Number	GP2T080A
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Power Dissipation (Max)	188W (Tc)
Supplier Device Package	TO-247-4
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1377 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)

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