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GE12160CEA3

GE Aerospace

Manufacturer Part #:

GE12160CEA3

Manufacturer:

GE Aerospace

Package:

Module

Datasheet:

Description:

1200V 1425A SiC Half-Bridge

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Specifications

Product Details

Mfr	GE Aerospace
Series	SiC Power
Package	Bulk
Technology	Silicon Carbide (SiC)
FET Feature	Silicon Carbide (SiC)
Power - Max	3.75kW (Tc)
Configuration	2 N-Channel (Half Bridge)
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 480mA
Base Product Number	GE12160
Operating Temperature	-55°C ~ 150°C (Tc)
Rds On (Max) @ Id, Vgs	1.5mOhm @ 475A, 20V
Supplier Device Package	Module
Gate Charge (Qg) (Max) @ Vgs	3744nC @ 18V
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	90000pF @ 600V
Current - Continuous Drain (Id) @ 25°C	1.425kA (Tc)

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