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GAN190-650EBEZ

Nexperia USA Inc.

Manufacturer Part #:

GAN190-650EBEZ

Manufacturer:

Nexperia USA Inc.

Package:

DFN8080-8

Datasheet:

Description:

650 V, 190 MOHM GALLIUM NITRIDE

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Specifications

Product Details

Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+7V, -1.4V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-VDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 12.2mA
Base Product Number	GAN190
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	190mOhm @ 3.9A, 6V
Power Dissipation (Max)	125W (Ta)
Supplier Device Package	DFN8080-8
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 6 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	96 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	6V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)

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