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G630J

Goford Semiconductor

Manufacturer Part #:

G630J

Manufacturer:

Goford Semiconductor

Package:

TO-251

Datasheet:

Description:

N200V, 9A,RD<0.28@10V,VTH1.0V~3.

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Specifications

Product Details

Mfr	Goford Semiconductor
Series	G
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	280mOhm @ 4.5A, 10V
Power Dissipation (Max)	83W (Tc)
Supplier Device Package	TO-251
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)

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