Home / Diode Arrays / G3S12010B

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G3S12010B

Global Power Technology-GPT

Manufacturer Part #:

G3S12010B

Manufacturer:

Global Power Technology-GPT

Package:

TO-247AB

Datasheet:

Description:

SIC SCHOTTKY DIODE 1200V 10A 3-P

Send an RFQ

For any specific requests regarding price, qty, ect. please send an RFQ.

Contact Name

Company Name

Country

Quantity

Specifications

Product Details

Mfr	Global Power Technology-GPT
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Cut Tape (CT)
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-247AB
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)	1200 V
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 5 A
Current - Average Rectified (Io) (per Diode)	39A (DC)

User Guide

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer.

Request for Quotations

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.