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BUK7E2R3-40E,127-NXP

NXP USA Inc.

Manufacturer Part #:

Manufacturer:

NXP USA Inc.

Package:

I2PAK

Datasheet:

Description:

PFET, 120A I(D), 40V, 0.0023OHM,

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Specifications

Product Details

Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 25A, 10V
Power Dissipation (Max)	293W (Tc)
Supplier Device Package	I2PAK
Gate Charge (Qg) (Max) @ Vgs	109.2 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	8500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)

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