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BUK6E2R0-30C127

NXP USA Inc.

Manufacturer Part #:

BUK6E2R0-30C127

Manufacturer:

NXP USA Inc.

Package:

I2PAK

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Product Details

Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±16V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.2mOhm @ 25A, 10V
Power Dissipation (Max)	306W (Tc)
Supplier Device Package	I2PAK
Gate Charge (Qg) (Max) @ Vgs	229 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	14964 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)

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