Home / FET, MOSFET Arrays / BSM400D12P2G003

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSM400D12P2G003

Rohm Semiconductor

Manufacturer Part #:

BSM400D12P2G003

Manufacturer:

Rohm Semiconductor

Package:

Module

Datasheet:

Description:

SILICON CARBIDE POWER MODULE. B

Send an RFQ

For any specific requests regarding price, qty, ect. please send an RFQ.

Contact Name

Company Name

Country

Quantity

Specifications

Product Details

Mfr	Rohm Semiconductor
Series	-
Package	Bulk
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	2450W (Tc)
Configuration	2 N-Channel (Half Bridge)
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 85mA
Base Product Number	BSM400
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	Module
Gate Charge (Qg) (Max) @ Vgs	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	38000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	400A (Tc)

User Guide

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer.

Request for Quotations

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.