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BAS316,H3F

Toshiba Semiconductor and Storage

Manufacturer Part #:

BAS316,H3F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

USC

Datasheet:

Description:

DIODE GEN PURP 100V 250MA USC

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Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Tape & Reel (TR)
Technology	Standard
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Product Status	Active
Base Product Number	BAS316
Capacitance @ Vr, F	0.35pF @ 0V, 1MHz
Supplier Device Package	USC
Reverse Recovery Time (trr)	3 ns
Current - Reverse Leakage @ Vr	200 nA @ 80 V
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	250mA
Operating Temperature - Junction	150°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA

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