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APTM100H80FT1G

Microsemi Corporation

Manufacturer Part #:

APTM100H80FT1G

Manufacturer:

Microsemi Corporation

Package:

SP1

Datasheet:

Description:

MOSFET 4N-CH 1000V 11A SP1

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Specifications

Product Details

Mfr	Microsemi Corporation
Series	-
Package	Bulk
Technology	MOSFET (Metal Oxide)
FET Feature	-
Power - Max	208W
Configuration	4 N-Channel (Half Bridge)
Mounting Type	Chassis Mount
Package / Case	SP1
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 1mA
Base Product Number	APTM100
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	960mOhm @ 9A, 10V
Supplier Device Package	SP1
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Drain to Source Voltage (Vdss)	1000V (1kV)
Input Capacitance (Ciss) (Max) @ Vds	3876pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A

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