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2SK3128(Q)

Toshiba Semiconductor and Storage

Manufacturer Part #:

2SK3128(Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Datasheet:

Description:

MOSFET N-CH 30V 60A TO3P

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Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 1mA
Base Product Number	2SK3128
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	60A (Ta)

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