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2SJ304(F)

Toshiba Semiconductor and Storage

Manufacturer Part #:

2SJ304(F)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220NIS

Datasheet:

Description:

MOSFET P-CH 60V 14A TO220NIS

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Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Bulk
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Base Product Number	2SJ304
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	120mOhm @ 7A, 10V
Power Dissipation (Max)	40W (Tc)
Supplier Device Package	TO-220NIS
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)

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