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2N7635-GA

GeneSiC Semiconductor

Manufacturer Part #:

2N7635-GA

Manufacturer:

GeneSiC Semiconductor

Package:

TO-257

Datasheet:

Description:

TRANS SJT 650V 4A TO257

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Specifications

Product Details

Mfr	GeneSiC Semiconductor
Series	-
Package	Bulk
FET Type	-
Vgs (Max)	-
Technology	SiC (Silicon Carbide Junction Transistor)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-257-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Operating Temperature	-55°C ~ 225°C (TJ)
Rds On (Max) @ Id, Vgs	415mOhm @ 4A
Power Dissipation (Max)	47W (Tc)
Supplier Device Package	TO-257
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	324 pF @ 35 V
Drive Voltage (Max Rds On, Min Rds On)	-
Current - Continuous Drain (Id) @ 25°C	4A (Tc) (165°C)

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